PART |
Description |
Maker |
MTM8N35 MTM8N40 MTH8N40 MTH8N35 |
(MTH8N35 / MTH8N40) Power Field Effect Transistor Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS
|
Motorola Semiconductor MOTOROLA[Motorola, Inc]
|
MTP16N25E MTP16N25E_D ON2556 MTP16N25E-D |
TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 16 AMPERES 250 VOLTS RDS(on) = 0.25 OHM From old datasheet system
|
ON Semiconductor MOTOROLA[Motorola, Inc]
|
MTD10N10EL MTD10N10ELT4 MTD10N10ELT4G |
TMOS Power FET TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount
|
ONSEMI[ON Semiconductor]
|
MTM50N05E MTM50N05 |
TMOS IV POWER FIELD EFFECT TRANSISTORS
|
Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E |
16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET From old datasheet system TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate
|
ETC Motorola, Inc ON Semiconductor
|
MTA1N60E |
FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR
|
Motorola, Inc.
|
IRF840 IRF843 IRF842 IRF841 |
N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
Motorola Inc MOTOROLA[Motorola Inc] MOTOROLA[Motorola, Inc]
|
MTE60N35 MTE60N40 MTE50N45 MTE50N50 |
POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT MODE SILICON GATE TMOS
|
MOTOROLA[Motorola, Inc]
|
MTA1N60E |
FULLY ISOLATED TMOS E-FET POWER FIELD EFFECT TRANSISTOR Fully Isolated TMOS E-FET / Power Rifld Effect Transistor
|
MOTOROLA[Motorola, Inc]
|
MTM60N06 MTM55N10 |
(MTM55N10 / MTM60N06) N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR
|
Motorola
|
MTD3055E1 |
TMOS IV N-Channel Enhancement-Mode Power Field Effect Transistor DPAK for Surface or Insertion Mount
|
Motorola, Inc.
|